US 12,261,256 B2
Optoelectronic component, optoelectronic arrangement and method
Hubert Halbritter, Dietfurt Toeging (DE); Erwin Lang, Regensburg (DE); Julia Stolz, Regensburg (DE); Andreas Rausch, Tegernheim (DE); and Simon Schwalenberg, Brennberg, CA (US)
Assigned to OSRAM Opto Semiconductors GmbH, Regensburg (DE)
Appl. No. 17/430,254
Filed by OSRAM Opto Semiconductors GmbH, Regensburg (DE)
PCT Filed Feb. 11, 2020, PCT No. PCT/EP2020/053498
§ 371(c)(1), (2) Date Aug. 11, 2021,
PCT Pub. No. WO2020/165185, PCT Pub. Date Aug. 20, 2020.
Claims priority of application No. 10 2019 103 365.9 (DE), filed on Feb. 11, 2019; application No. 10 2019 110 499.8 (DE), filed on Apr. 23, 2019; application No. 10 2019 111 767.4 (DE), filed on May 7, 2019; and application No. PCT/EP2020/052191 (WO), filed on Jan. 29, 2020.
Prior Publication US 2022/0140210 A1, May 5, 2022
Int. Cl. H01L 33/50 (2010.01); H01L 33/60 (2010.01)
CPC H01L 33/60 (2013.01) [H01L 33/50 (2013.01)] 25 Claims
OG exemplary drawing
 
1. Optoelectronic component comprising:
a layer stack of a p-doped layer;
an n-doped layer;
an active region located between the p-doped and n-doped layer;
wherein the layer stack rises above a major surface and the active region is located above a center of the layer stack as viewed from the major surface, wherein the layer stack has a reducing diameter from the major surface; and
a reflective layer over a surface of the layer stack;
in which areas of the active layer adjacent to the reflective layer exhibit quantum well intermixing.