US 12,261,251 B2
Semiconductor light-emitting device and method for manufacturing semiconductor light-emitting device
Yuichi Ito, Tokyo (JP)
Assigned to STANLEY ELECTRIC CO., LTD., Tokyo (JP)
Filed by STANLEY ELECTRIC CO., LTD., Tokyo (JP)
Filed on Jun. 21, 2022, as Appl. No. 17/845,909.
Claims priority of application No. 2021-103965 (JP), filed on Jun. 23, 2021.
Prior Publication US 2022/0416132 A1, Dec. 29, 2022
Int. Cl. H01L 33/50 (2010.01); H01L 33/00 (2010.01); H01L 33/62 (2010.01)
CPC H01L 33/505 (2013.01) [H01L 33/0095 (2013.01); H01L 33/62 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor light-emitting device comprising:
a substrate having a wiring electrode;
a semiconductor light-emitting element which is mounted on the wiring electrode of the substrate, the semiconductor light-emitting element having a light-emitting functional layer with an upper surface exposed;
a wavelength conversion plate which is mounted on the light-emitting functional layer of the semiconductor light-emitting element, the wavelength conversion plate being made of a sintered body including fluorescent material particles and binder particles; and
an adhesive layer including a resin medium, which is configured to adhere the wavelength conversion plate on a side of a light-incident surface thereof to the light-emitting functional layer of the semiconductor light-emitting element on a side of a light output surface thereof, and resin particles dispersed in the resin medium, wherein
the light-incident surface of the wavelength conversion plate exposes a sintered surface of the sintered body with a concave portion, and
the resin particles are fitted in the concave portion of the light-incident surface of the wavelength conversion plate and compressively deformed.