US 12,261,244 B2
LED structure and preparation method thereof
Weihua Liu, Jiangsu (CN); and Kai Cheng, Jiangsu (CN)
Assigned to Enkris Semiconductor (Wuxi), Ltd., Wuxi (CN)
Filed by ENKRIS SEMICONDUCTOR (WUXI), LTD., Jiangsu (CN)
Filed on Apr. 19, 2022, as Appl. No. 17/724,363.
Claims priority of application No. 202110996553.7 (CN), filed on Aug. 27, 2021.
Prior Publication US 2023/0066105 A1, Mar. 2, 2023
Int. Cl. H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/38 (2010.01)
CPC H01L 33/32 (2013.01) [H01L 33/0075 (2013.01); H01L 33/06 (2013.01); H01L 33/382 (2013.01); H01L 2933/0016 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An LED structure, comprising:
a first conductivity semiconductor layer;
a stress releasing layer, disposed on the first conductivity semiconductor layer, wherein a material of the stress releasing layer is a III-V group semiconductor material;
a V-shaped layer, disposed on the stress releasing layer and having V-shaped grooves, wherein the V-shaped grooves are formed under a control of the stress releasing layer;
a multi-quantum well layer, configured to, conformally cover a surface of the V-shaped layer away from the stress releasing layer; and
a second conductivity semiconductor layer, disposed on a side of the multi-quantum well layer away from the first conductivity semiconductor layer, wherein a conductivity type of the second conductivity semiconductor layer is different from a conductivity type of the first conductivity semiconductor layer.