US 12,261,237 B2
Photovoltaic devices with very high breakdown voltages
Andre Filipe Rodrigues Augusto, Tempe, AZ (US); Apoorva Srinivasa, Beaverton, OR (US); and Stuart Bowden, Tempe, AZ (US)
Assigned to Arizona Board of Regents on behalf of Arizona State University, Scottsdale, AZ (US)
Filed by Andre Filipe Rodrigues Augusto, Tempe, AZ (US); Apoorva Srinivasa, Beaverton, OR (US); and Stuart Bowden, Tempe, AZ (US)
Filed on May 2, 2022, as Appl. No. 17/734,737.
Claims priority of provisional application 63/182,216, filed on Apr. 30, 2021.
Prior Publication US 2022/0359778 A1, Nov. 10, 2022
Int. Cl. H01L 31/18 (2006.01); H01L 31/0288 (2006.01); H01L 31/05 (2014.01); H01L 31/077 (2012.01)
CPC H01L 31/0512 (2013.01) [H01L 31/0288 (2013.01); H01L 31/077 (2013.01); H01L 31/1868 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A solar cell, comprising:
a semiconductor substrate comprising a crystalline silicon wafer, the semiconductor substrate having a bulk resistivity greater than 10 ohms centimeter (Ω-cm), wherein the semiconductor substrate is undoped;
an n-type region over a first portion that includes a first surface of the semiconductor substrate, wherein the n-type region comprises an n-doped layer of hydrogenated amorphous silicon (a-Si:H) deposited over a first side of the semiconductor substrate;
a p-type region over a second portion that includes a second surface of the semiconductor substrate, wherein the n-type region and the p-type region form a heterojunction of the solar cell and wherein the first surface is oppositely disposed from the second surface and wherein the p-type region comprises a p-doped layer of a-Si:H deposited over a second side of the semiconductor substrate opposite the first side; and
an intrinsic layer of a-Si:H between the semiconductor substrate and the n-doped layer of a-Si:H.