US 12,261,232 B1
Ultraviolet sensors and methods using integrated silicon carbide lateral junction field-effect transistors
James A. Holmes, Fayetteville, AR (US); Anthony M. Francis, Elkins, AR (US); Matthew W. Barlow, Springdale, AR (US); Nicholas J. Chiolino, Springdale, AR (US); and Sonia M. Perez, Farmington, AR (US)
Filed by James A. Holmes, Fayetteville, AR (US); Anthony M. Francis, Elkins, AR (US); Matthew W. Barlow, Springdale, AR (US); Nicholas J. Chiolino, Springdale, AR (US); and Sonia M. Perez, Farmington, AR (US)
Filed on May 16, 2022, as Appl. No. 17/744,994.
Application 17/744,994 is a continuation in part of application No. 16/778,645, filed on Jan. 31, 2020, abandoned.
Claims priority of provisional application 62/799,081, filed on Jan. 31, 2019.
Int. Cl. H01L 31/0312 (2006.01); G01J 1/42 (2006.01); H01L 31/112 (2006.01)
CPC H01L 31/0312 (2013.01) [G01J 1/429 (2013.01); H01L 31/112 (2013.01)] 3 Claims
OG exemplary drawing
 
1. A photodetection circuit for ultraviolet light, the circuit comprising:
a silicon carbide junction field effect transistor with an outer surface, the silicon carbide junction field effect transistor including a transistor gate junction positioned proximate to the outer surface to receive ultraviolet light;
a reverse bias circuit connected to the transistor gate junction to provide a reverse bias voltage;
the ultraviolet light and reverse bias voltage inducing a photo current at the transistor gate junction.