US 12,261,230 B2
Single photon avalanche diode and manufacturing method, detector array, and image sensor
Kai Zang, Shenzhen (CN); Shuang Li, Shenzhen (CN); and Zhijie Ma, Shenzhen (CN)
Assigned to Shenzhen Adaps Photonics Technology Co. LTD., Shenzhen (CN)
Filed by Shenzhen Adaps Photonics Technology Co. LTD., Shenzhen (CN)
Filed on Jun. 11, 2021, as Appl. No. 17/346,132.
Application 17/346,132 is a continuation of application No. PCT/CN2019/105778, filed on Sep. 12, 2019.
Claims priority of application No. 201811524540.4 (CN), filed on Dec. 13, 2018.
Prior Publication US 2021/0305440 A1, Sep. 30, 2021
Int. Cl. H01L 31/02 (2006.01); H01L 27/146 (2006.01); H01L 31/0232 (2014.01)
CPC H01L 31/02027 (2013.01) [H01L 27/1464 (2013.01); H01L 27/14643 (2013.01); H01L 27/14685 (2013.01); H01L 31/02327 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A back-side illuminated (BSI) single-photon avalanche diode (SPAD) pixel circuit comprising:
a substrate material;
a first sidewall structure and a second sidewall structure;
a diffraction grating structure configured on the substrate material;
a first doped region overlaying the diffraction grating structure, the first doped region comprising a first top surface region and a second top surface region;
a second doped region overlaying the first top surface region of the first doped region, the second doped region comprising a third top surface region;
a third doped region overlaying the second top surface region of the first doped region and the third top surface region of the second doped region, the third doped region being positioned between the first sidewall structure and the second sidewall structure; and
a light-trapping structure overlaying the third doped region, the light-trapping structure comprising pyramid structures, the pyramid structures being horizontally aligned.