US 12,261,227 B2
Thin film transistor, display substrate and display device with reduced leakage current
Chenglong Wang, Beijing (CN); Yezhou Fang, Beijing (CN); Feng Li, Beijing (CN); Lei Yao, Beijing (CN); Lei Yan, Beijing (CN); Kai Li, Beijing (CN); Lin Hou, Beijing (CN); Xiaogang Zhu, Beijing (CN); Yun Gao, Beijing (CN); Yanzhao Peng, Beijing (CN); Teng Ye, Beijing (CN); and Hua Yang, Beijing (CN)
Assigned to ORDOS YUANSHENG OPTOELECTRONICS CO., LTD., Inner Mongolia (CN); and BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Appl. No. 17/772,785
Filed by ORDOS YUANSHENG OPTOELECTRONICS CO., LTD., Inner Mongolia (CN); and BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
PCT Filed May 21, 2021, PCT No. PCT/CN2021/095028
§ 371(c)(1), (2) Date Apr. 28, 2022,
PCT Pub. No. WO2022/001468, PCT Pub. Date Jan. 6, 2022.
Claims priority of application No. 202010614083.9 (CN), filed on Jun. 30, 2020.
Prior Publication US 2022/0406945 A1, Dec. 22, 2022
Int. Cl. H01L 29/786 (2006.01); G02B 27/01 (2006.01); H01L 29/417 (2006.01)
CPC H01L 29/78696 (2013.01) [G02B 27/0172 (2013.01); H01L 29/41733 (2013.01); H01L 29/78633 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A thin film transistor, comprising: a base, and a gate, an active layer, a source and a drain located on the base, wherein the gate comprises a first gate and a second gate which are sequentially provided on the base and are electrically connected to each other; the active layer is located between the first gate and the second gate, and orthographic projections of the first gate and the second gate on the base are partially overlapped with an orthographic projection of the active layer on the base; and
the orthographic projections of the first gate and the second gate on the base are partially overlapped with each other, wherein
a light-shielding layer is provided on a side of the active layer close to the base, an orthographic projection of the light-shielding layer on the base is at least partially overlapped with the orthographic projection of the active layer on the base; and
the light-shielding layer and the first gate are provided in a same layer and are made of a same material, wherein, the orthographic projections of the light-shielding layer and the first gate on the base substantially cover the orthographic projection of the active layer on the base.