US 12,261,219 B2
Semiconductor device including ferroelectric layer and insulation layer with metal particles and methods of manufacturing the same
Won Tae Koo, Icheon-si (KR); and Jae Gil Lee, Icheon-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Feb. 17, 2022, as Appl. No. 17/674,835.
Claims priority of application No. 10-2021-0126756 (KR), filed on Sep. 24, 2021.
Prior Publication US 2023/0099330 A1, Mar. 30, 2023
Int. Cl. H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/78391 (2014.09) [H01L 29/40111 (2019.08); H01L 29/42348 (2013.01); H01L 29/516 (2013.01); H01L 29/6684 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a ferroelectric layer disposed on the substrate;
a gate insulation layer disposed on the ferroelectric layer;
metal particles disposed in the gate insulation layer; and
a gate electrode layer disposed on the gate insulation layer,
wherein the metal particles are embedded in an inner region of the gate insulation layer, and
wherein the metal particles are distributed on a plane, spaced apart from the ferroelectric layer.