US 12,261,218 B2
Semiconductor structure and method of forming the same
Yi-Huan Chen, Hsinchu (TW); Chien-Chih Chou, New Taipei (TW); Szu-Hsien Liu, Hsinchu County (TW); and Kong-Beng Thei, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Sep. 28, 2023, as Appl. No. 18/477,536.
Application 18/477,536 is a continuation of application No. 17/321,216, filed on May 14, 2021, granted, now 11,810,973.
Prior Publication US 2024/0030340 A1, Jan. 25, 2024
Int. Cl. H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7813 (2013.01) [H01L 29/0646 (2013.01); H01L 29/66734 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a substrate;
a doped region within the substrate;
a pair of source/drain regions extending along a first direction on opposite sides of the doped region;
a gate electrode disposed in the doped region, wherein the gate electrode has a plurality of first segments between the pair of source/drain regions; and
a protection structure overlapping the gate electrode and spaced apart from the pair of source/drain regions from a top-view perspective.