| CPC H01L 29/7806 (2013.01) [H01L 29/0696 (2013.01); H01L 29/1608 (2013.01); H01L 29/41741 (2013.01); H01L 29/41775 (2013.01); H01L 29/4238 (2013.01); H01L 29/47 (2013.01); H01L 29/4916 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01)] | 20 Claims |

|
1. A silicon carbide semiconductor device comprising:
a drift layer of a first conductivity type provided in a semiconductor base containing silicon carbide;
a base layer of a second conductivity type provided in the semiconductor base at a front surface side thereof;
a plurality of first trenches provided in the semiconductor base at the front surface side thereof, and having a plurality of first portions extending in a first direction to form a striped pattern;
a second trench provided in the semiconductor base at the front surface side thereof, and having a plurality of second portions extending parallel to the plurality of first portions;
a plurality of gate electrodes respectively provided in the plurality of first trenches; and
a diode electrode provided in the second trench, wherein
the diode electrode includes:
a plurality of inner electrodes provided in the plurality of second portions, and
an outer electrode connecting the plurality of inner electrodes and surrounding ends of the first portions in a plan view of the silicon carbide semiconductor device, and
in the first direction, the second portions is spaced apart from the ends of the first portions by a predetermined distance.
|