US 12,261,215 B2
Fin on silicon-on-insulator
Hong Yu, Clifton Park, NY (US); Haiting Wang, Clifton Park, NY (US); and Zhenyu Hu, Clifton Park, NY (US)
Assigned to GlobalFoundaries U.S. Inc., Malta, NY (US)
Filed by GlobalFoundries U.S. Inc., Malta, NY (US)
Filed on Jan. 27, 2022, as Appl. No. 17/649,184.
Prior Publication US 2023/0238452 A1, Jul. 27, 2023
Int. Cl. H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/66795 (2013.01) [H01L 21/823431 (2013.01); H01L 29/785 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A structure comprising:
an active layer over a buried oxide layer, the active layer having a top surface, the top surface of the active layer having a first portion and a second portion;
a barrier stack over the first portion of the top surface of the active layer, the barrier stack including a barrier layer, wherein the second portion of the top surface of the active layer is adjacent to the barrier stack;
a fin spaced from the first portion of the top surface of the active layer by the barrier stack, the fin having a first side surface, a second side surface opposite to the first side surface and a top surface;
a dielectric layer on the first side surface, the second side surface and the top surface of the fin, and the second portion of the top surface of the active layer; and
a metal layer over the dielectric layer.