US 12,261,213 B2
Fin-end gate structures and method forming same
Shih-Yao Lin, New Taipei (TW); Kuei-Yu Kao, Hsinchu (TW); Chen-Ping Chen, Toucheng Township (TW); and Chih-Han Lin, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 25, 2022, as Appl. No. 17/814,779.
Application 17/814,779 is a division of application No. 16/870,429, filed on May 8, 2020, granted, now 11,532,723.
Claims priority of provisional application 62/927,567, filed on Oct. 29, 2019.
Prior Publication US 2022/0359722 A1, Nov. 10, 2022
Int. Cl. H01L 29/78 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/66545 (2013.01) [H01L 21/0273 (2013.01); H01L 21/31144 (2013.01); H01L 21/76224 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823456 (2013.01); H01L 21/823462 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/0673 (2013.01); H01L 29/1037 (2013.01); H01L 29/42364 (2013.01); H01L 29/42376 (2013.01); H01L 29/42392 (2013.01); H01L 29/513 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 29/66553 (2013.01); H01L 29/6656 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
isolation regions extending into a semiconductor substrate;
a protruding fin between portions of the isolation regions, wherein the protruding fin protrudes higher than the isolation regions;
a first gate stack comprising:
a first gate dielectric on first sidewalls and a first top surface of a first portion of the protruding fin, wherein the first gate dielectric has a first thickness; and
a first gate electrode on the first gate dielectric; and
a second gate stack comprising:
a second gate dielectric on second sidewalls and a second top surface of a second portion of the protruding fin, wherein in a top view of the structure, the protruding fin ends directly underlying the second gate stack, with an end of the protruding fin being laterally between, and parallel to, opposing sidewalls of the second gate stack in the top view, and the second gate dielectric has a second thickness greater than the first thickness; and
a second gate electrode on the second gate dielectric.