US 12,261,210 B2
Electronic devices comprising deuterium-containing dielectric materials
Manzar Siddik, Boise, ID (US); Terry H. Kim, Boise, ID (US); and Kyubong Jung, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Feb. 16, 2021, as Appl. No. 17/176,444.
Prior Publication US 2022/0262919 A1, Aug. 18, 2022
Int. Cl. H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H10B 43/27 (2023.01)
CPC H01L 29/513 (2013.01) [H01L 29/40117 (2019.08); H01L 29/4234 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01); H10B 43/27 (2023.02)] 5 Claims
OG exemplary drawing
 
1. An electronic device comprising:
a stack of alternating dielectric materials and conductive materials;
a pillar region extending vertically through the stack;
a tunnel region adjacent to a channel region within the pillar region, a storage node adjacent to the tunnel region and extending continuously along a vertical direction of the pillar region, and an oxide material adjacent to the storage node and directly adjacent to the stack; and
a deuterium-containing dielectric material substantially free of hydrogen within the pillar region and laterally adjacent to the dielectric materials and the conductive materials of the stack, the deuterium-containing, substantially hydrogen-free dielectric material being limited to one or more of the oxide material, the storage node and the tunnel region.