US 12,261,209 B2
Replacement channel 2D material integration
Robert D. Clark, Albany, NY (US); H. Jim Fulford, Albany, NY (US); and Mark I. Gardner, Albany, NY (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Feb. 7, 2022, as Appl. No. 17/666,265.
Prior Publication US 2023/0253467 A1, Aug. 10, 2023
Int. Cl. H01L 29/417 (2006.01); H01L 21/8234 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/41791 (2013.01) [H01L 21/823412 (2013.01); H01L 21/823418 (2013.01); H01L 29/1033 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a base structure comprising a seed material;
forming source/drain contacts coupled to first and second portions of the base structure, respectively, wherein the source/drain contacts each have at least a chemical element;
exposing a third portion of the base structure;
selectively growing a two-dimensional (2D) material at least coupled to the third portion of the base structure, wherein the 2D material includes the chemical element; and
forming an active gate coupled to the 2D material.