US 12,261,201 B2
Semiconductor device
Young-Hun Kim, Seoul (KR); Jae Seok Yang, Hwaseong-si (KR); and Hae Wang Lee, Yongin-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Nov. 1, 2023, as Appl. No. 18/499,436.
Application 18/499,436 is a continuation of application No. 17/526,840, filed on Nov. 15, 2021, granted, now 11,973,109.
Application 17/526,840 is a continuation of application No. 16/214,659, filed on Dec. 10, 2018, granted, now 11,195,910, issued on Dec. 7, 2021.
Claims priority of application No. 10-2018-0068000 (KR), filed on Jun. 14, 2018.
Prior Publication US 2024/0063259 A1, Feb. 22, 2024
Int. Cl. H01L 29/06 (2006.01); H01L 27/092 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/762 (2006.01)
CPC H01L 29/0649 (2013.01) [H01L 27/0924 (2013.01); H01L 29/42376 (2013.01); H01L 29/4916 (2013.01); H01L 29/6656 (2013.01); H01L 29/6681 (2013.01); H01L 29/7851 (2013.01); H01L 21/76224 (2013.01); H01L 29/0653 (2013.01); H01L 29/66545 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a gate insulating support extending in a first direction;
first and second fin patterns aligned in the first direction and spaced apart from the gate insulating support in a second direction intersecting the first direction;
a third fin pattern between the first fin pattern and the second fin pattern;
a first element isolation structure extending in the second direction and disposed between the first fin pattern and the third fin pattern;
a second element isolation structure extending in the second direction between the second fin pattern and the third fin pattern; and
first and second gate structures spaced apart from the first and second element isolation structures, the gate insulating support being disposed between the first gate structure and the first element isolation structure and between the second gate structure and the second element isolation structure.