US 12,261,200 B2
Semiconductor device including isolation regions
Min-Chul Sun, Yongin-si (KR); Dae Won Ha, Seoul (KR); Dong Hoon Hwang, Hwaseong-si (KR); Jong Hwa Baek, Yongin-si (KR); Jong Min Jeon, Suwon-si (KR); Seung Mo Ha, Seoul (KR); Kwang Yong Yang, Seoul (KR); Jae Young Park, Yongin-si (KR); and Young Su Chung, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Oct. 17, 2023, as Appl. No. 18/488,381.
Application 18/488,381 is a continuation of application No. 18/162,892, filed on Feb. 1, 2023, granted, now 11,830,911.
Application 18/162,892 is a continuation of application No. 17/212,847, filed on Mar. 25, 2021, granted, now 11,575,002, issued on Feb. 7, 2023.
Application 17/212,847 is a continuation of application No. 16/715,075, filed on Dec. 16, 2019, granted, now 10,964,782, issued on Mar. 30, 2021.
Application 16/715,075 is a continuation of application No. 15/933,827, filed on Mar. 23, 2018, granted, now 10,529,801, issued on Jan. 7, 2020.
Claims priority of application No. 10-2017-0123503 (KR), filed on Sep. 25, 2017.
Prior Publication US 2024/0047521 A1, Feb. 8, 2024
Int. Cl. H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/417 (2006.01); H10B 10/00 (2023.01)
CPC H01L 29/0649 (2013.01) [H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/41791 (2013.01); H10B 10/12 (2023.02); H10B 10/18 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A method of a semiconductor device comprising:
forming a first trench to define first active regions and a second trench to define second active regions;
forming a first preliminary isolation region in the first trench and a second isolation region in the second trench;
forming a groove to form a first isolation portion by etching the first preliminary isolation region;
forming a second isolation portion in the groove; and
forming a third isolation region to define base active regions and that extends into the second active regions and the second isolation region,
wherein a first isolation region includes the first isolation portion and the second isolation portion, and
wherein a distance that the third isolation region extends into the second active regions is greater than a distance that the second isolation region extends into the second active regions.