US 12,261,199 B2
Thermoelectric cooling of semiconductor devices
Jen-Yuan Chang, Hsinchu (TW); Jheng-Hong Jiang, Hsinchu (TW); Chin-Chou Liu, Hsinchu County (TW); and Long Song Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jun. 7, 2022, as Appl. No. 17/834,289.
Claims priority of provisional application 63/232,774, filed on Aug. 13, 2021.
Prior Publication US 2023/0052136 A1, Feb. 16, 2023
Int. Cl. H01L 31/058 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/0649 (2013.01) [H01L 29/10 (2013.01); H01L 29/7835 (2013.01); H01L 2924/0002 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit (IC) device, comprising:
a chip including:
a semiconductor substrate;
a plurality of field effect transistors formed on active regions of the semiconductor substrate;
isolation structures extending into the semiconductor substrate and separating the plurality of field effect transistors; and
a multi-layer interconnect (MLI) structure disposed over a first surface of the semiconductor substrate and connecting the plurality of field effect transistors;
a thermoelectric module embedded in the semiconductor substrate, wherein the thermoelectric module includes a first semiconductor structure electrically connected to a second semiconductor structure, wherein the thermoelectric module extends through a thickness of the semiconductor substrate from the first surface to an opposing backside surface, and wherein the first semiconductor structure and the second semiconductor structure include dopants of different conductivity types.