US 12,261,183 B2
Image pickup device and method for manufacturing image pickup device
Kentaro Suzuki, Kawasaki (JP); and Shunsuke Nakatsuka, Kawasaki (JP)
Assigned to Canon Kabushiki Kaisha, Tokyo (JP)
Filed by CANON KABUSHIKI KAISHA, Tokyo (JP)
Filed on Dec. 29, 2022, as Appl. No. 18/148,341.
Application 16/750,913 is a division of application No. 15/255,039, filed on Sep. 1, 2016, abandoned.
Application 18/148,341 is a continuation of application No. 16/750,913, filed on Jan. 23, 2020, granted, now 11,563,046.
Claims priority of application No. 2015-180068 (JP), filed on Sep. 11, 2015.
Prior Publication US 2023/0136761 A1, May 4, 2023
Int. Cl. H01L 27/146 (2006.01); H04N 25/771 (2023.01)
CPC H01L 27/14625 (2013.01) [H01L 27/14609 (2013.01); H01L 27/1462 (2013.01); H01L 27/14643 (2013.01); H01L 27/14685 (2013.01); H01L 27/14689 (2013.01); H04N 25/771 (2023.01); H01L 27/14623 (2013.01); H01L 27/14627 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A device including a semiconductor substrate and comprising:
a photoelectric conversion unit,
a charge accumulation unit,
a floating diffusion unit,
a drain unit,
a first gate electrode disposed between the photoelectric conversion unit and the drain unit,
a second gate electrode disposed between the photoelectric conversion unit and the charge accumulation unit,
a third gate electrode disposed between the charge accumulation unit and the floating diffusion unit,
an optical waveguide disposed above the photoelectric conversion unit and including a first portion,
a light shielding portion arranged above at least a part of the second gate electrode and at least a part of the charge accumulation unit,
a reset transistor including a fourth gate electrode, and
a source follower transistor including a fifth gate electrode,
wherein a length of the third gate electrode along a longitudinal direction of the third gate electrode is longer than at least one of a length of the fourth gate electrode along a longitudinal direction of the fourth gate electrode and a length of the fifth gate electrode along a longitudinal direction of the fifth gate electrode.