| CPC H01L 27/14621 (2013.01) [H01L 23/481 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H01L 23/58 (2013.01); H01L 24/06 (2013.01); H01L 27/14603 (2013.01); H01L 27/14618 (2013.01); H01L 27/14625 (2013.01); H01L 27/14627 (2013.01); H01L 27/14634 (2013.01); H01L 27/14636 (2013.01); H01L 23/02 (2013.01); H01L 27/1462 (2013.01)] | 20 Claims |

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1. A semiconductor package, comprising:
an image sensor chip;
a transparent substrate spaced apart from the image sensor chip;
a joining structure in contact with a top surface of the image sensor chip and a bottom surface of the transparent substrate, on an edge region of the top surface of the image sensor chip;
a micro lens array on the top surface of the image sensor chip;
a circuit substrate electrically connected to the image sensor chip; and
a conductive pad and a solder ball between the image sensor chip and the circuit substrate,
wherein the image sensor chip comprises a penetration electrode, which extends into an internal portion of the image sensor chip, and a terminal pad, which is on the edge region of the top surface of the image sensor chip and is electrically connected to the penetration electrode,
wherein the solder ball is electrically connected to the penetration electrode and overlaps the penetration electrode in a direction perpendicular to a bottom surface of the transparent substrate,
wherein the joining structure overlaps the terminal pad,
wherein the joining structure comprises a first spacer comprising a single layer insulator, a second spacer comprising an insulating material, and an adhesive layer, and
wherein the first spacer is in direct contact with the bottom surface of the transparent substrate and the second spacer is in direct contact with the terminal pad.
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