US 12,261,172 B2
Semiconductor devices and methods of manufacturing thereof
Ya-Yi Tsai, Hsinchu (TW); Shih-Yao Lin, New Taipei (TW); Chi-Hsiang Chang, Hsinchu (TW); Wei-Han Chen, Hsinchu (TW); and Shu-Yuan Ku, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 28, 2021, as Appl. No. 17/460,198.
Prior Publication US 2023/0061323 A1, Mar. 2, 2023
Int. Cl. H01L 27/088 (2006.01); H01L 21/8234 (2006.01)
CPC H01L 27/0886 (2013.01) [H01L 21/823481 (2013.01); H01L 21/823431 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
an isolation dielectric disposed on the substrate and having a horizontal top surface;
a plurality of fins extending from the substrate, the fins including a first group of active fins arranged in an active region and an inactive fin having at least a portion in an inactive region;
a dummy fin disposed on the isolation dielectric and between the first group of active fins and the inactive fin;
an active gate disposed over the first group of active fins, but not the inactive fin, and contacting the isolation dielectric; and
a gate isolation structure extending adjacent to the active gate and contacting the isolation dielectric, the gate isolation structure disposed between the dummy fin and the inactive fin, and a bottom portion of the gate isolation structure extending into the isolation dielectric,
wherein a distance from the inactive fin to a closest of the active fins is greater than or equal to a sum of a width of the dummy fin and twice a minimum process space.