US 12,261,161 B2
Optoelectronic device manufacturing method
François Templier, Grenoble (FR); and Sébastien Becker, Grenoble (FR)
Assigned to Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Paris (FR)
Filed by Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Paris (FR)
Filed on May 11, 2022, as Appl. No. 17/741,713.
Claims priority of application No. 2105156 (FR), filed on May 18, 2021; and application No. 2111484 (FR), filed on Oct. 28, 2021.
Prior Publication US 2022/0375913 A1, Nov. 24, 2022
Int. Cl. H01L 25/16 (2023.01); H01L 23/00 (2006.01)
CPC H01L 25/167 (2013.01) [H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12043 (2013.01)] 18 Claims
OG exemplary drawing
 
1. Optoelectronic device manufacturing method, comprising the steps of:
a) arranging an active photosensitive diode stack on a first substrate;
b) arranging an active light-emitting diode stack on a second substrate;
c) after steps a) and b), transferring the active photosensitive diode stack onto the active light-emitting diode stack, and then removing the first substrate; and
d) after step c), transferring the assembly comprising the active photosensitive diode stack and the active light-emitting diode stack onto an integrated control circuit previously formed inside and on top of a third semiconductor substrate, and then removing the second substrate.