US 12,261,144 B2
Semiconductor device and method for fabricating a semiconductor device
Alexander Heinrich, Bad Abbach (DE)
Assigned to Infineon Technologies Austria AG, Villach (AT)
Filed by Infineon Technologies Austria AG, Villach (AT)
Filed on Oct. 11, 2023, as Appl. No. 18/378,733.
Application 18/378,733 is a division of application No. 17/062,685, filed on Oct. 5, 2020, granted, now 11,817,417.
Claims priority of application No. 19202745 (EP), filed on Oct. 11, 2019.
Prior Publication US 2024/0038714 A1, Feb. 1, 2024
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 24/32 (2013.01) [H01L 24/83 (2013.01); H01L 2224/32503 (2013.01); H01L 2224/8381 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01015 (2013.01); H01L 2924/01023 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/01031 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01049 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/3512 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor device, the method comprising:
providing a semiconductor die with a metallization layer comprising a first metal with a comparatively high melting point;
providing a die carrier comprising a second metal with a comparatively high melting point;
providing a solder material comprising a third metal with a comparatively low melting point;
providing a layer of a fourth metal with a comparatively high melting point on the semiconductor die or on the die carrier; and
soldering the semiconductor die to the die carrier and thereby creating:
a first intermetallic compound arranged between the semiconductor die and the die carrier and comprising the first metal and the third metal;
a second intermetallic compound arranged between the first intermetallic compound and the die carrier and comprising the second metal and the third metal; and
precipitates of a third intermetallic compound arranged between the first intermetallic compound and the second intermetallic compound and comprising the third metal and the fourth metal,
wherein a surface of the first intermetallic compound contacts a surface of the second intermetallic compound, forming an interface.