US 12,261,137 B2
Bonding structure and method for forming the same
Ling-Yi Chuang, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Feb. 10, 2022, as Appl. No. 17/668,785.
Application 17/668,785 is a continuation of application No. PCT/CN2021/117197, filed on Sep. 8, 2021.
Claims priority of application No. 202110746106.6 (CN), filed on Jul. 1, 2021.
Prior Publication US 2023/0005868 A1, Jan. 5, 2023
Int. Cl. H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 25/065 (2023.01)
CPC H01L 24/08 (2013.01) [H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H01L 2224/0508 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/80001 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising
a first substrate, and a first bonding structure and a first conductive via which are formed in the first substrate,
wherein the first bonding structure comprises a first metal layer and a second metal layer with a melting point lower than a melting point of the first metal layer, the first metal layer comprises a first surface and a second surface arranged opposite to each other, the first surface of the first metal layer is provided with a first groove, and the second metal layer is arranged in the first groove; and
wherein the first conductive via is in contact with the second surface of the first metal layer, and a projection of the first conductive via coincides with a projection of the first groove in a direction perpendicular to the first surface of the first metal layer; and,
wherein a thickness of the second metal layer is less than lum, the second metal layer comprises at least one of bismuth, cadmium, tin, lead, dysprosium or indium, the first metal layer comprises at least one of copper or tungsten, and a bonding surface of the first bonding structure is in the shape of a circle, an ellipse, or a rectangle.