US 12,261,131 B2
Semiconductor device and method of manufacturing semiconductor device
Tsuneyuki Matsushima, Matsumoto (JP); Kazuhiro Kitahara, Matsumoto (JP); and Naoko Kodama, Matsumoto (JP)
Assigned to FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed by FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed on May 17, 2022, as Appl. No. 17/746,934.
Claims priority of application No. 2021-120973 (JP), filed on Jul. 21, 2021.
Prior Publication US 2023/0027894 A1, Jan. 26, 2023
Int. Cl. H01L 23/00 (2006.01); H01L 21/78 (2006.01); H01L 23/544 (2006.01); H01L 23/58 (2006.01)
CPC H01L 23/562 (2013.01) [H01L 21/78 (2013.01); H01L 23/544 (2013.01); H01L 23/585 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/5446 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor substrate provided with an active portion and an edge termination structure portion surrounding the active portion in a top view;
an interlayer dielectric film provided above the semiconductor substrate;
a protective film provided above the interlayer dielectric film; and
a protruding portion provided farther from the active portion than the edge termination structure portion and protruding further than the interlayer dielectric film, wherein
the protruding portion is not covered with the protective film, and
the protective film is provided closer to the active portion than the protruding portion.