US 12,261,123 B2
Selective metallization of integrated circuit packages
Aaron Fitzsimmons, Chattanooga, TN (US); and William T. Minehan, Chattanooga, TN (US)
Assigned to Advanced Technical Ceramics Company, Chattanooga, TN (US)
Filed by Advanced Technical Ceramics Company, Chattanooga, TN (US)
Filed on Apr. 15, 2022, as Appl. No. 17/659,391.
Application 17/659,391 is a continuation of application No. 16/051,093, filed on Jul. 31, 2018, granted, now 11,309,251.
Claims priority of provisional application 62/539,329, filed on Jul. 31, 2017.
Prior Publication US 2022/0344269 A1, Oct. 27, 2022
Int. Cl. H01L 23/538 (2006.01); H01L 21/02 (2006.01); H01L 23/00 (2006.01); H01L 23/367 (2006.01); H01L 23/373 (2006.01); H01L 23/498 (2006.01); H01L 23/15 (2006.01)
CPC H01L 23/5383 (2013.01) [H01L 21/02527 (2013.01); H01L 21/02529 (2013.01); H01L 21/0254 (2013.01); H01L 21/02554 (2013.01); H01L 23/3677 (2013.01); H01L 23/3735 (2013.01); H01L 23/49827 (2013.01); H01L 24/09 (2013.01); H01L 23/15 (2013.01); H01L 24/48 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/15153 (2013.01); H01L 2924/15313 (2013.01); H01L 2924/15787 (2013.01)] 30 Claims
OG exemplary drawing
 
1. A ceramic package comprising:
a ceramic package substrate configured to house an electronic component therein;
a metallization structure configured to electrically connect the electronic component to the outside world, the metallization structure comprising:
a base metal layer comprising a refractory metal formed on the ceramic package substrate,
a nickel (Ni)-based layer deposited on the base metal layer, wherein the Ni-based layer is a Ni layer having phosphorous (P) and boron (B) each at a concentration less than 0.01 weight (wt.) %,
a plated Ni layer plated over the Ni-based layer and having a different composition from the Ni-based layer, the plated Ni layer comprising P at a concentration exceeding the concentration of P in the Ni-based layer,
a palladium (Pd) layer plated on the plated Ni layer, wherein the Pd layer has a thickness of 0.05 μm to 0.5 μm, and
a gold (Au) layer plated on the Pd layer.