US 12,261,119 B2
Method for manufacturing semiconductor device with impurity doped oxide semiconductor layer
Junichi Koezuka, Tochigi (JP); Toshimitsu Obonai, Tochigi (JP); Masami Jintyou, Tochigi (JP); and Daisuke Kurosaki, Tochigi (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
Filed on Sep. 21, 2023, as Appl. No. 18/370,916.
Application 18/370,916 is a continuation of application No. 17/729,306, filed on Apr. 26, 2022, granted, now 11,810,858.
Application 17/729,306 is a continuation of application No. 16/957,159, granted, now 11,322,442, issued on May 3, 2022, previously published as PCT/IB2018/060299, filed on Dec. 19, 2018.
Claims priority of application No. 2018-000501 (JP), filed on Jan. 5, 2018; and application No. 2018-021912 (JP), filed on Feb. 9, 2018.
Prior Publication US 2024/0014137 A1, Jan. 11, 2024
Int. Cl. H01L 23/532 (2006.01); H01L 21/02 (2006.01); H01L 21/263 (2006.01); H01L 21/265 (2006.01)
CPC H01L 23/5329 (2013.01) [H01L 21/02129 (2013.01); H01L 21/2636 (2013.01); H01L 21/265 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device comprising an oxide semiconductor layer, comprising the steps of:
forming an oxide film in contact with the oxide semiconductor layer,
supplying oxygen to the oxide film, and
doping an impurity element to the oxide semiconductor layer through the oxide film after the step of supplying oxygen to the oxide film,
wherein the oxide film is an insulating film configured to emit oxygen when heated, wherein the impurity element is phosphorous, boron, magnesium, aluminum, or silicon, and
wherein the impurity element is doped to achieve a region with a concentration distribution where a concentration of the impurity element in the oxide semiconductor layer becomes higher as the impurity element becomes closer to the oxide film.