US 12,261,118 B2
Interconnection structure with composite isolation feature and method for manufacturing the same
Tse-Yao Huang, Taipei (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Aug. 5, 2022, as Appl. No. 17/881,831.
Prior Publication US 2024/0047360 A1, Feb. 8, 2024
Int. Cl. H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01)
CPC H01L 23/5329 (2013.01) [H01L 21/7682 (2013.01); H01L 23/528 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
an electrically conductive structure having a first lateral surface and a second lateral surface;
a first isolation feature disposed on the first lateral surface of the electrically conductive structure;
a second isolation feature disposed on the second lateral surface of the electrically conductive structure,
a first dielectric layer disposed over the electrically conductive structure and the second isolation feature; and
a second dielectric layer disposed over the first dielectric layer, wherein the second dielectric layer has a protruding portion protruding toward the first isolation feature;
wherein the first isolation feature is different from the second isolation feature;
wherein the electrically conductive structure comprises a first layer and a second layer abutting the first layer;
wherein a vertical dimension of the first layer is substantially the same as a vertical dimension of the second layer.