US 12,261,117 B2
Semiconductor device and method of manufacturing the same
Masaharu Yamaji, Matsumoto (JP); Taichi Karino, Matsumoto (JP); Hitoshi Sumida, Matsumoto (JP); and Hideaki Itoh, Matsumoto (JP)
Assigned to FUJI ELECTRIC CO., LTD., Kawasaki (JP)
Filed by FUJI ELECTRIC CO., LTD., Kawasaki (JP)
Filed on Sep. 23, 2021, as Appl. No. 17/483,181.
Application 17/483,181 is a continuation of application No. PCT/JP2020/032447, filed on Aug. 27, 2020.
Claims priority of application No. 2019-190824 (JP), filed on Oct. 18, 2019.
Prior Publication US 2022/0013466 A1, Jan. 13, 2022
Int. Cl. H01L 23/532 (2006.01); H01L 21/768 (2006.01); H03K 17/567 (2006.01)
CPC H01L 23/53223 (2013.01) [H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H03K 17/567 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a wiring layer;
a titanium nitride layer deposited on the wiring layer;
a titanium oxynitride layer deposited on the titanium nitride layer;
a titanium oxide layer deposited on the titanium oxynitride layer; and
a surface passivation film deposited on the titanium oxide layer.