US 12,261,116 B2
Backside signal routing
Ching-Yu Huang, Hsinchu (TW); Wei-Cheng Lin, Taichung (TW); Shih-Wei Peng, Hsinchu (TW); Jiann-Tyng Tzeng, Hsinchu (TW); and Yi-Kan Cheng, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Mar. 10, 2022, as Appl. No. 17/691,582.
Claims priority of provisional application 63/229,798, filed on Aug. 5, 2021.
Prior Publication US 2023/0040094 A1, Feb. 9, 2023
Int. Cl. H01L 23/528 (2006.01); H01L 21/8234 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 27/088 (2006.01)
CPC H01L 23/5286 (2013.01) [H01L 21/823475 (2013.01); H01L 23/481 (2013.01); H01L 23/5283 (2013.01); H01L 23/5226 (2013.01); H01L 27/088 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit device, comprising:
a substrate having a frontside and a backside;
a first active semiconductor device formed on the frontside of the substrate and having an input and an output;
one or more layers of conductive paths formed on the frontside of the substrate; and
one or more layers of conductive paths formed on the backside of the substrate,
at least one of the input and output of the first active semiconductor device being electrically connected to the one or more layers of conductive paths formed on the backside of the substrate, wherein the at least one of the input and output of the first active semiconductor device is electrically connected to the one or more layers of conductive paths formed on the backside of the substrate not through any of the one or more layers of conductive path formed on the frontside of the substrate.