US 12,261,115 B2
Semiconductor devices and methods of manufacturing thereof
Kam-Tou Sio, Zhubei (TW); and Jiann-Tyng Tzeng, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 7, 2021, as Appl. No. 17/314,897.
Claims priority of provisional application 63/142,034, filed on Jan. 27, 2021.
Prior Publication US 2022/0238442 A1, Jul. 28, 2022
Int. Cl. H01L 23/528 (2006.01); G06F 30/392 (2020.01); H01L 21/768 (2006.01); H01L 27/088 (2006.01)
CPC H01L 23/5286 (2013.01) [G06F 30/392 (2020.01); H01L 21/768 (2013.01); H01L 27/0886 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first active region, disposed on a front side of a substrate, that extends along a first lateral direction;
a second active region, disposed on the front side, that extends along the first lateral direction, wherein the first active region has a first conduction type and the second active region has a second conduction type opposite to the first conduction type; and
a first interconnect structure, formed on a back side of the substrate opposite to the front side, that includes: a first portion extending along the first lateral direction and vertically disposed below the first active region; and a second portion extending along a second lateral direction, wherein the second lateral direction is perpendicular to the first lateral direction, wherein the first interconnect structure is configured to carry a non-power signal, and wherein the first portion and the second portion form a multi-dimensional signal line on the back side of the substrate.