US 12,261,113 B2
Middle-end-of-line strap for standard cell
Meng-Hung Shen, Hsinchu County (TW); Chih-Liang Chen, Hsinchu (TW); Charles Chew-Yuen Young, Cupertino, CA (US); Jiann-Tyng Tzeng, Hsinchu (TW); Kam-Tou Sio, Hsinchu County (TW); and Wei-Cheng Lin, Taichung (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Dec. 12, 2022, as Appl. No. 18/064,907.
Application 17/133,264 is a division of application No. 16/264,622, filed on Jan. 31, 2019, granted, now 10,879,173, issued on Dec. 29, 2020.
Application 15/817,119 is a division of application No. 15/058,077, filed on Mar. 1, 2016, granted, now 9,837,353, issued on Dec. 5, 2017.
Application 18/064,907 is a continuation of application No. 17/133,264, filed on Dec. 23, 2020, granted, now 11,532,553.
Application 16/264,622 is a continuation of application No. 15/817,119, filed on Nov. 17, 2017, granted, now 10,204,857, issued on Feb. 12, 2019.
Prior Publication US 2023/0103578 A1, Apr. 6, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/528 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 49/02 (2006.01); H01L 27/02 (2006.01); H01L 29/78 (2006.01)
CPC H01L 23/528 (2013.01) [H01L 21/762 (2013.01); H01L 21/76877 (2013.01); H01L 21/76895 (2013.01); H01L 23/5226 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 28/00 (2013.01); H01L 29/42356 (2013.01); H01L 29/66795 (2013.01); H01L 23/5283 (2013.01); H01L 27/0207 (2013.01); H01L 29/785 (2013.01); H01L 2924/01029 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a first conductive line;
a first conductive segment electrically coupled to the first conductive line;
a second conductive segment electrically coupled the first conductive segment; and
a third conductive segment, wherein the second conductive segment is disposed between the first conductive segment and the third conductive segment,
wherein a top surface of the first conductive segment is aligned with a top surface of the second conductive segment in a same layer.