| CPC H01L 23/5222 (2013.01) [H01L 23/528 (2013.01)] | 14 Claims |
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1. A semiconductor structure, comprising a plurality of metal layers and a substrate;
wherein the plurality of metal layers are provided with a plurality of virtual metal blocks and at least one signal line;
virtual metal blocks of two adjacent metal layers are staggered from each other in a direction perpendicular to the substrate;
a first projection of a first virtual metal block on the substrate is a polygon, wherein the first virtual metal block is one of the plurality of virtual metal blocks of one of the plurality of metal layers, the first projection has a plurality of effective sides opposite to a second projection of a target signal line on the substrate, and distances from the plurality of effective sides of the first projection to a straight line where the second projection is located are different; and
the first virtual metal block is a virtual metal block, closest to the target signal line, of a target metal layer, wherein the target metal layer is one of the plurality of metal layers, and the target metal layer is a metal layer where the target signal line is located;
wherein projections of virtual metal blocks of non-adjacent two metal layers on the substrate are overlapped in the direction perpendicular to the substrate.
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