US 12,261,107 B2
Semiconductor package including redistribution substrate and method of manufacturing the same
Moongil Jung, Asan-si (KR); Suhyeon Ku, Asan-si (KR); Soyoen Park, Cheonan-si (KR); and Kyungsub Kim, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Mar. 14, 2022, as Appl. No. 17/693,867.
Claims priority of application No. 10-2021-0087326 (KR), filed on Jul. 2, 2021.
Prior Publication US 2023/0005828 A1, Jan. 5, 2023
Int. Cl. H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01)
CPC H01L 23/49822 (2013.01) [H01L 23/3128 (2013.01); H01L 23/49827 (2013.01); H01L 23/562 (2013.01); H01L 24/73 (2013.01); H01L 2224/73204 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor package comprising:
a semiconductor chip; and
a redistribution substrate connected to the semiconductor chip, the redistribution substrate including
a conductive structure including a lower conductive pattern, and a redistribution between the lower conductive pattern and the semiconductor chip and electrically connected to the lower conductive pattern,
an insulating structure covering at least one of a side surface of the lower conductive pattern or a side surface of the redistribution structure, and
a protective layer between the insulating structure and at least one of the lower conductive pattern or the redistribution structure, the protective layer including a first protective layer including a conductive material and in contact with the side surface of at least one of the lower conductive pattern or the redistribution structure, and a second protective layer including an insulating material and a surface in contact with at least a portion of a side surface of the first protective layer,
wherein a portion of the surface of the second protective layer in contact with the side surface of the first protective layer extends past an upper end of the side surface of the first protective layer such that a distance between an upper end of the surface of the second protective layer and the semiconductor chip is less than a distance between the upper end of the side surface of the first protective layer and the semiconductor chip.