US 12,261,102 B2
Semiconductor package and method of forming the same
Li-Ling Liao, Hsinchu (TW); Ming-Chih Yew, Hsinchu (TW); Che-Chia Yang, Taipei (TW); Po-Chen Lai, Hsinchu County (TW); Po-Yao Lin, Hsinchu County (TW); and Shin-Puu Jeng, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 30, 2021, as Appl. No. 17/461,941.
Prior Publication US 2023/0063251 A1, Mar. 2, 2023
Int. Cl. H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01)
CPC H01L 23/49816 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/563 (2013.01); H01L 23/3121 (2013.01); H01L 23/49822 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 2224/13083 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/8112 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A semiconductor package, comprising:
a redistribution structure having a first surface and a second surface opposite to the first surface;
a first conductive pillar and a second conductive pillar disposed on the first surface of the redistribution structure and electrically connected with the redistribution structure, wherein a maximum lateral dimension of the first conductive pillar is greater than a maximum lateral dimension of the second conductive pillar, and a topography variation of a top surface of the first conductive pillar is greater than a topography variation of a top surface of the second conductive pillar, wherein the first conductive pillar comprises a main body portion having a recess on a top surface thereof, a maximum depth of the recess ranges from greater than 0 μm to less than or equal to about 10 μm, and a maximum lateral dimension of the recess ranges from about 10 μm to about 85 μm; and
a semiconductor device disposed over the first surface of the redistribution structure, wherein the semiconductor device comprises a third conductive pillar and a fourth conductive pillar, the third conductive pillar is bonded to first conductive pillar through a first joint structure, and the fourth conductive pillar is bonded to second conductive pillar through a second joint structure.