US 12,261,092 B2
Semiconductor package and manufacturing method thereof
Tzu-Sung Huang, Tainan (TW); Ming-Hung Tseng, Miaoli County (TW); Yen-Liang Lin, Taichung (TW); Ban-Li Wu, Hsinchu (TW); Hsiu-Jen Lin, Hsinchu County (TW); Teng-Yuan Lo, Hsinchu (TW); and Hao-Yi Tsai, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 30, 2021, as Appl. No. 17/460,346.
Prior Publication US 2023/0066968 A1, Mar. 2, 2023
Int. Cl. H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 23/367 (2006.01); H01L 23/498 (2006.01)
CPC H01L 23/3128 (2013.01) [H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 23/367 (2013.01); H01L 23/49822 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor package, comprising:
a semiconductor device;
an encapsulating material encapsulating a first part of a side surface of the semiconductor device;
a redistribution structure disposed over the semiconductor device and a first side of the encapsulating material; and
an adhesive residue disposed over a second side of the encapsulating material opposite to the first side and surrounding the semiconductor device, wherein the adhesive residue encapsulates a second part of the side surface of the semiconductor device, wherein the adhesive residue is made of insulating adhesive material, reveals a back surface of the semiconductor device, the adhesive residue comprehensively covers and overlap with the second side of the encapsulating material, the adhesive residue comprises a central portion closer to the semiconductor device and a peripheral portion surrounding the central portion, and a maximum thickness of the central portion is greater than a maximum thickness of the peripheral portion.