US 12,261,085 B2
Semiconductor device with reduced loading effect
Wei-Lun Chen, Taipei (TW); Li-Te Lin, Hsinchu (TW); and Chao-Hsien Huang, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 26, 2023, as Appl. No. 18/359,051.
Application 18/359,051 is a continuation of application No. 17/652,761, filed on Feb. 28, 2022, granted, now 11,776,850.
Application 17/652,761 is a continuation of application No. 16/924,686, filed on Jul. 9, 2020, granted, now 11,264,281, issued on Mar. 1, 2022.
Prior Publication US 2023/0369118 A1, Nov. 16, 2023
Int. Cl. H01L 21/8234 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 21/823412 (2013.01) [H01L 21/3065 (2013.01); H01L 21/308 (2013.01); H01L 21/3086 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/823431 (2013.01); H01L 21/823807 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/0657 (2013.01); H01L 29/0692 (2013.01); H01L 29/1025 (2013.01); H01L 29/1037 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01)] 20 Claims
OG exemplary drawing
 
16. A method, comprising:
forming a first patterning layer on a substrate;
forming a second patterning layer on the first patterning layer;
etching the second patterning layer to form a first plurality of trenches and a second plurality of trenches, wherein a first width of the first plurality of trenches is less than and a second width of the second plurality of trenches;
etching the first patterning layer to increase a depth of the first plurality of trenches and the second plurality of trenches; and
selectively etching the first plurality of trenches and the second plurality of trenches, wherein a first horizontal etching rate in the first plurality of trenches is lower than a second horizontal etching rate in the second plurality of trenches.