US 12,261,083 B2
Semiconductor device and method for fabricating the same
Chia-Chen Sun, Kaohsiung (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on May 10, 2022, as Appl. No. 17/740,377.
Claims priority of application No. 202210367306.5 (CN), filed on Apr. 8, 2022.
Prior Publication US 2023/0326792 A1, Oct. 12, 2023
Int. Cl. H01L 21/768 (2006.01); H01L 23/522 (2006.01)
CPC H01L 21/76897 (2013.01) [H01L 21/76831 (2013.01); H01L 23/5226 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor device, comprising:
forming an active device on a substrate, wherein the active device comprises:
a gate structure comprising:
a gate dielectric layer on the substrate;
a gate electrode on the gate dielectric layer;
a source/drain region adjacent to two sides of the gate electrode; and
forming a floating contact plug directly on the gate electrode.