US 12,261,082 B2
Semiconductor devices with a nitrided capping layer
Po-Chin Chang, Taichung (TW); Lin-Yu Huang, Hsinchu (TW); Shuen-Shin Liang, Hsinchu (TW); Sheng-Tsung Wang, Hsinchu (TW); Cheng-Chi Chuang, New Taipei (TW); Chia-Hung Chu, Taipei (TW); Tzu Pei Chen, Hsinchu (TW); Yuting Cheng, Hsinchu (TW); and Sung-Li Wang, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jan. 18, 2022, as Appl. No. 17/577,707.
Claims priority of provisional application 63/224,897, filed on Jul. 23, 2021.
Prior Publication US 2023/0029002 A1, Jan. 26, 2023
Int. Cl. H01L 21/768 (2006.01); H01L 23/535 (2006.01)
CPC H01L 21/76849 (2013.01) [H01L 21/76805 (2013.01); H01L 21/7684 (2013.01); H01L 21/76846 (2013.01); H01L 21/76871 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a first conductive structure in a first dielectric layer on a substrate;
depositing a second dielectric layer on the first conductive structure and the first dielectric layer;
forming an opening in the second dielectric layer to expose the first conductive structure and a portion of the first dielectric layer;
forming a nitrided layer by performing a nitridation treatment to a top portion of the exposed first conductive structure, a top portion of the portion of the first dielectric layer, sidewalls of the opening, and a top portion of the second dielectric layer; and
forming a second conductive structure in the opening, wherein the second conductive structure is in contact with the nitrided layer.
 
11. A method, comprising:
forming a transistor structure on a substrate;
forming a metal via in a first dielectric layer disposed on the transistor structure;
forming a nitrided layer including a nitrided metal layer and a nitrided dielectric layer on a top portion of the metal via and a top portion of the first dielectric layer, respectively;
depositing a second dielectric layer on the nitrided layer;
forming an opening in the second dielectric layer to expose the nitrided metal layer; and
forming a metal line in the opening, wherein the metal line is in contact with the nitrided metal layer.
 
17. A method, comprising:
depositing a dielectric layer on a substrate;
forming a metal line opening in the dielectric layer to expose a conductive via contact;
nitriding a top portion of the exposed conductive via contact, a dielectric sidewall of the metal line opening, and a top portion of the dielectric layer; and
forming a metal line in the metal line opening.