US 12,261,081 B2
Tungsten feature fill with inhibition control
Tsung-Han Yang, San Jose, CA (US); Michael Bowes, Scotts Valley, CA (US); Gang Liu, Fremont, CA (US); and Anand Chandrashekar, Fremont, CA (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Appl. No. 17/430,633
Filed by Lam Research Corporation, Fremont, CA (US)
PCT Filed Feb. 13, 2020, PCT No. PCT/US2020/018103
§ 371(c)(1), (2) Date Aug. 12, 2021,
PCT Pub. No. WO2020/168071, PCT Pub. Date Aug. 20, 2020.
Claims priority of provisional application 62/805,197, filed on Feb. 13, 2019.
Prior Publication US 2022/0172987 A1, Jun. 2, 2022
Int. Cl. H01L 21/768 (2006.01)
CPC H01L 21/76843 (2013.01) [H01L 21/76871 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method for selective inhibition control in substrate processing, the method including:
providing a substrate including a feature having one or more feature openings and a feature interior;
forming a nucleation layer on a surface of the feature interior;
depositing a nonconformal bulk layer on a surface of the nucleation layer to leave a region of the nucleation layer covered, and a region of the nucleation layer uncovered by the nonconformal bulk layer;
forming an inhibition layer on the covered and uncovered regions of the nucleation layer; and
depositing tungsten in the feature.