| CPC H01L 21/6838 (2013.01) [B08B 3/12 (2013.01)] | 20 Claims |

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16. A wafer processing method comprising:
processing a first wafer part including a retainer ring portion and a plurality of sawn first-sawve dies in a first chamber unit;
processing a second wafer part including a wafer part and a carrier substrate in a second chamber unit; and
stacking and pre-bonding the first dies processed in the first chamber unit and the second wafer part processed in the second chamber unit in a third chamber unit.
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