US 12,261,065 B2
Control device and control method for single-wafer processing epitaxial growth apparatus, and epitaxial wafer production system
Naoyuki Wada, Tokyo (JP)
Assigned to SUMCO Corporation, Tokyo (JP)
Filed by SUMCO Corporation, Tokyo (JP)
Filed on Jun. 17, 2022, as Appl. No. 17/807,705.
Claims priority of application No. 2021-101969 (JP), filed on Jun. 18, 2021.
Prior Publication US 2022/0406599 A1, Dec. 22, 2022
Int. Cl. H01L 21/67 (2006.01)
CPC H01L 21/67253 (2013.01) [H01L 21/67023 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A control device for single-wafer processing epitaxial growth apparatuses, comprising:
a calculation unit generating control information of one of a plurality of epitaxial growth apparatuses that needs new control, the apparatuses being provided in one production line to produce an epitaxial wafer by forming an epitaxial film on a surface of a wafer using a dopant gas and a source gas supplied from one source gas source as materials; and
a storage unit storing at least one of a measured thickness and a measured resistivity of an epitaxial film formed in the epitaxial growth apparatus that needs new control in the plurality of epitaxial growth apparatuses provided in the same production line, at least one of a measured thickness and a measured resistivity of an epitaxial film formed in another one of the other epitaxial growth apparatuses in the same production line that is concurrently in operation with the epitaxial growth apparatus that needs new control, and specifications of a product that are set in the epitaxial growth apparatus that needs new control,
wherein the calculation unit generates information for controlling at least one of a supply time of the source gas and a flow rate of the dopant gas in the epitaxial growth apparatus that needs new control, based on at least one of the measured thickness and the measured resistivity of the epitaxial film formed in the epitaxial growth apparatus that needs new control and at least one of the measured thickness and the measured resistivity of the epitaxial film formed in said another epitaxial growth apparatus in the same production line that is concurrently in operation, the measurement values being stored in the storage unit; and outputs the information to the epitaxial growth apparatus that needs new control.