US 12,261,059 B2
Manufacturing method of RF components
Patrick Hauttecoeur, Saint Cyr sur Loire (FR)
Assigned to STMICROELECTRONICS (TOURS) SAS, Tours (FR)
Filed by STMICROELECTRONICS (TOURS) SAS, Tours (FR)
Filed on Aug. 3, 2022, as Appl. No. 17/880,473.
Claims priority of application No. 2108655 (FR), filed on Aug. 12, 2021.
Prior Publication US 2023/0048614 A1, Feb. 16, 2023
Int. Cl. H01L 21/32 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01)
CPC H01L 21/3247 (2013.01) [H01L 21/0231 (2013.01); H01L 21/02323 (2013.01); H01L 21/02625 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a radio frequency device, comprising:
forming an oxide layer at a surface of a substrate;
forming a first defect layer of the substrate containing first defects of a first complex type between carbon atoms and first atoms and of a second complex type between carbon atoms and oxygen atoms, having a first thickness, and being present at the surface of the substrate by laser annealing the substrate with a laser, and forming a second defect layer of the substrate containing second defects of a void type different from the first complex type and the second complex type, having a second thickness, being present between the first defect layer and a first portion of the substrate, and being on the first portion of the substrate by the laser annealing of the substrate, and forming the first defect layer and the second defect layer by the laser annealing of the substrate includes:
melting a second portion of the substrate at the surface of the substrate and on the first portion of the substrate by exposing the second portion of the substrate to the laser;
cooling the second portion of the substrate and the first portion of the substrate, the cooling the second portion of the substrate and the first portion of the substrate including:
forming the first defect layer containing the first defects of the first complex type and the second complex type, being in an amorphous state, and being on the second defect layer; and
forming the second defect layer containing the second defects of the void type, being in a crystalline state, and being present between the first defect layer and the first portion of the substrate, the second defect layer separating the first defect layer from the first portion of the substrate;
forming an insulating layer on the first defect layer; and
forming the radio frequency component on the insulating layer, wherein:
the first and second thicknesses are in a range from 0.5-μm (micrometers) to 2-μm (micrometers), or equal to upper and lower ends of this range.