US 12,261,058 B2
Semiconductor device and manufacturing method of semiconductor device
Yasunori Agata, Matsumoto (JP); Takashi Yoshimura, Matsumoto (JP); Hiroshi Takishita, Matsumoto (JP); Misaki Uchida, Matsumoto (JP); Michio Nemoto, Matsumoto (JP); Toru Ajiki, Matsumoto (JP); and Yuichi Onozawa, Matsumoto (JP)
Assigned to FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed by FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed on Sep. 28, 2021, as Appl. No. 17/486,977.
Application 17/486,977 is a continuation of application No. PCT/JP2020/034982, filed on Sep. 15, 2020.
Claims priority of application No. 2019-187797 (JP), filed on Oct. 11, 2019.
Prior Publication US 2022/0013368 A1, Jan. 13, 2022
Int. Cl. H01L 21/322 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/32 (2006.01); H01L 29/40 (2006.01); H01L 29/739 (2006.01); H01L 29/861 (2006.01)
CPC H01L 21/3223 (2013.01) [H01L 27/0664 (2013.01); H01L 29/063 (2013.01); H01L 29/1095 (2013.01); H01L 29/32 (2013.01); H01L 29/407 (2013.01); H01L 29/7397 (2013.01); H01L 29/8613 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor substrate having an upper surface and a lower surface and including a bulk donor, wherein
a hydrogen chemical concentration distribution of the semiconductor substrate in a depth direction is flat, monotonically increasing, or monotonically decreasing from the lower surface to the upper surface except for a portion where a local hydrogen concentration peak is provided, and
a supplemental donor concentration of the semiconductor substrate is higher than a bulk donor concentration distributed throughout the semiconductor substrate from the upper surface to the lower surface.