US 12,261,055 B2
Slurry compositions for chemical mechanical planarization
An-Hsuan Lee, Hsinchu (TW); Chun-Hung Liao, Hsinchu (TW); Chen-Hao Wu, Hsinchu (TW); Shen-Nan Lee, Hsinchu County (TW); Teng-Chun Tsai, Hsinchu (TW); and Huang-Lin Chao, Hsinchu (TW)
Assigned to TAIWAN SSEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Nov. 7, 2022, as Appl. No. 17/982,028.
Application 17/982,028 is a continuation of application No. 16/991,975, filed on Aug. 12, 2020, granted, now 11,495,471.
Claims priority of provisional application 62/906,564, filed on Sep. 26, 2019.
Prior Publication US 2023/0058800 A1, Feb. 23, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/321 (2006.01); C09G 1/02 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/3212 (2013.01) [C09G 1/02 (2013.01); H01L 21/7684 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
receiving a semiconductor substrate having a metal material of ruthenium (Ru) exposed on a first surface, the first surface having a uniform material composition of the metal material;
receiving a first slurry including a first abrasive component of titanium oxide and a first amine-based alkaline component of ammonium hydroxide;
polishing the exposed metal material on the first surface with the first slurry until a second surface is exposed, the second surface including the metal material and a dielectric material, wherein the metal material has a first polishing rate and the dielectric material has a second polishing rate;
receiving a second slurry including a second abrasive component of silicon oxide, a second amine-based alkaline component of hydroxyamine, and a non-amine alkaline component; and
polishing the metal material and the dielectric material exposed on the second surface with the second slurry.