US 12,261,051 B2
Semiconductor device with fin isolation
Chang-Yin Chen, Taipei (TW); Che-Cheng Chang, New Taipei (TW); and Chih-Han Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Jul. 28, 2023, as Appl. No. 18/361,464.
Application 17/018,479 is a division of application No. 16/243,242, filed on Jan. 9, 2019, granted, now 10,777,419, issued on Sep. 15, 2020.
Application 18/361,464 is a continuation of application No. 17/692,824, filed on Mar. 11, 2022, granted, now 11,784,055.
Application 17/692,824 is a continuation of application No. 17/018,479, filed on Sep. 11, 2020, granted, now 11,276,578, issued on Mar. 15, 2022.
Claims priority of provisional application 62/751,701, filed on Oct. 28, 2018.
Prior Publication US 2023/0369059 A1, Nov. 16, 2023
Int. Cl. H01L 21/308 (2006.01); H01L 21/8234 (2006.01); H01L 23/31 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 21/3081 (2013.01) [H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/785 (2013.01); H01L 29/7854 (2013.01); H01L 23/3157 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a semiconductor fin extending from a substrate; and
a gate structure extending across the semiconductor fin,
wherein from a plan view, the semiconductor fin comprises a first sidewall, a second sidewall opposing the first sidewall, an end surface extending along a different horizontal direction than the first sidewall and the second sidewall, and a first corner portion connecting the first sidewall and the end surface, wherein from the plan view, the first corner portion is a straight line extending along a different horizontal direction than the first sidewall and the end surface.