	US 12,261,049 B2
	Selective etch of a substrate
David Thompson, Santa Clara, CA (US); Bhaskar Jyoti Bhuyan, Santa Clara, CA (US); Mark Saly, Santa Clara, CA (US); Lisa Enman, Santa Clara, CA (US); Aaron Dangerfield, Santa Clara, CA (US); Jesus Candelario Mendoza, Santa Clara, CA (US); Jeffrey W. Anthis, Santa Clara, CA (US); and Lakmal Kalutarage, Santa Clara, CA (US)
Assigned to Applied Materials , Inc., Santa Clara, CA (US)
Filed by APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed on Jun. 9, 2022, as Appl. No. 17/836,562.
Prior Publication US 2023/0420259 A1, Dec. 28, 2023
Int. Cl. H01L 21/306 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01)

CPC H01L 21/30604 (2013.01) [H01L 21/02063 (2013.01); H01L 21/02118 (2013.01); H01L 21/02126 (2013.01); H01L 21/0271 (2013.01); H01L 21/3081 (2013.01); H01L 21/31116 (2013.01); H01L 21/32135 (2013.01); H01L 21/02115 (2013.01); H01L 21/02219 (2013.01); H01L 21/02263 (2013.01)]

18 Claims

1. A method comprising:

placing a substrate into a chamber, the substrate comprising a layer including at least one trench formed therein, the at least one trench having a top surface, a bottom surface, and at least one side wall;

depositing a polymer film on the bottom surface of the at least one trench without depositing the polymer film on the at least one side wall of the at least one trench, wherein the polymer film is a flowable film that flows to the bottom surface of the at least one trench during depositing of the flowable film at a temperature in a target temperature range;

selectively forming a second film on the layer without forming the second film on the polymer film;

removing the polymer film from the bottom surface of the at least one trench; and

etching the bottom surface of the trench using an etch chemistry, wherein the second film protects the at least one sidewall from the etch chemistry.