US 12,261,048 B2
Method for manufacturing semiconductor device
Takashi Ishida, Nisshin (JP)
Assigned to DENSO CORPORATION, Kariya (JP); TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota (JP); and MIRISE Technologies Corporation, Nisshin (JP)
Filed by DENSO CORPORATION, Aichi-pref. (JP); TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota (JP); and MIRISE Technologies Corporation, Nisshin (JP)
Filed on Oct. 25, 2022, as Appl. No. 17/972,626.
Claims priority of application No. 2021-187690 (JP), filed on Nov. 18, 2021.
Prior Publication US 2023/0154756 A1, May 18, 2023
Int. Cl. H01L 21/268 (2006.01); H01L 21/78 (2006.01); H01L 21/326 (2006.01)
CPC H01L 21/268 (2013.01) [H01L 21/7813 (2013.01); H01L 21/326 (2013.01)] 3 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device, comprising
irradiating, with laser light, a semiconductor substrate having a p-type first semiconductor layer and an n-type second semiconductor layer so that the laser light converges on an interface between the first semiconductor layer and the second semiconductor layer, wherein each of the p-type first semiconductor layer and the n-type second semiconductor layer placed on the first semiconductor layer is formed of a compound semiconductor; and
separating the semiconductor substrate into the first semiconductor layer and the second semiconductor layer along the interface.