US 12,261,047 B2
Doping techniques
Wolfgang Aderhold, Cupertino, CA (US); Yi-Chiau Huang, Fremont, CA (US); Wei Liu, San Jose, CA (US); Benjamin Colombeau, San Jose, CA (US); and Abhilash Mayur, Salinas, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Aug. 5, 2022, as Appl. No. 17/882,177.
Application 17/882,177 is a division of application No. 16/536,600, filed on Aug. 9, 2019, granted, now 11,443,948.
Claims priority of provisional application 62/717,827, filed on Aug. 11, 2018.
Prior Publication US 2022/0375753 A1, Nov. 24, 2022
Int. Cl. H01L 21/20 (2006.01); H01L 21/225 (2006.01); H01L 21/324 (2006.01); H01L 21/02 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01)
CPC H01L 21/2255 (2013.01) [H01L 21/324 (2013.01); H01L 21/02269 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02)] 16 Claims
OG exemplary drawing
 
1. A method of forming an electronic device, the method comprising:
forming an amorphous boron dopant layer on a crystalline semiconductor material;
depositing additional semiconductor material on the amorphous boron dopant layer, the additional semiconductor material being substantially amorphous; and
annealing the electronic device at a temperature in the range of about 1000° C. to about 1300° C. to crystallize the additional semiconductor material and to melt the amorphous boron dopant layer to drive the boron from dopant layer into the additional semiconductor material to a depth greater than or equal to about 1 nm form a boron-doped crystalline semiconductor material.