US 12,261,041 B2
Semiconductor device manufacturing method, semiconductor memory device manufacturing method, semiconductor memory device, and substrate treatment apparatus
Tsunehiro Ino, Fujisawa (JP); and Akira Takashima, Fuchu (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Jun. 10, 2022, as Appl. No. 17/806,282.
Claims priority of application No. 2021-202915 (JP), filed on Dec. 14, 2021.
Prior Publication US 2023/0187203 A1, Jun. 15, 2023
Int. Cl. H01L 21/02 (2006.01); C23C 16/30 (2006.01); C23C 16/40 (2006.01); H10B 43/27 (2023.01)
CPC H01L 21/02326 (2013.01) [C23C 16/303 (2013.01); C23C 16/403 (2013.01); H01L 21/02178 (2013.01); H10B 43/27 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device manufacturing method, comprising:
forming an aluminum nitride film;
forming an aluminum hydroxide film containing diaspore-type aluminum hydroxide by performing treatment in a fluid containing water to the aluminum nitride film; and
forming an aluminum oxide film containing α-type aluminum oxide by performing heat treatment to the aluminum hydroxide film at a temperature equal to or more than 500° C. and equal to or less than 800° C.