	US 12,261,040 B2
	Substrate stripping method and epitaxial wafer
Hongpo Hu, Zhejiang (CN); Binzhong Dong, Jiangsu (CN); Peng Li, Jiangsu (CN); and Jiangbo Wang, Jiangsu (CN)
Assigned to HC Semitek (Zhejiang) Co. Ltd., Zhejiang (CN)
Appl. No. 17/773,293
Filed by HC SEMITEK (ZHEJIANG) CO., LTD., Zhejiang (CN)
PCT Filed Oct. 30, 2020, PCT No. PCT/CN2020/125103 § 371(c)(1), (2) Date Apr. 29, 2022, PCT Pub. No. WO2021/083304, PCT Pub. Date May 6, 2021.
Claims priority of application No. 201911042035.0 (CN), filed on Oct. 30, 2019.
Prior Publication US 2024/0153761 A1, May 9, 2024
Int. Cl. H01L 21/00 (2006.01); H01L 21/02 (2006.01)

CPC H01L 21/02293 (2013.01) [H01L 21/02348 (2013.01); H01L 21/02458 (2013.01); H01L 21/02483 (2013.01); H01L 21/0254 (2013.01)]

20 Claims

1. A substrate stripping method, comprising:

providing a substrate, the substrate having a recess on a first surface of the substrate;

forming a hydrophilic layer in the recess, the forming further comprising:

forming a TiO₂film in the recess; and

irradiating the TiO₂film with ultraviolet light to obtain the hydrophilic layer;

forming, on the first surface, an etching sacrificial layer covering the first surface, the etching sacrificial layer and the recesses defining a flowing space;

growing an epitaxial layer on the etching sacrificial layer; and

soaking the etching sacrificial layer and the substrate in an etching liquid, and etching the etching sacrificial layer within the etching liquid until the epitaxial layer is separated from the substrate.